Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers

被引：0

作者：

Sun, Yiling ^{[1
,2
]}

Ye, Jichun ^{[2
]}

Gao, Pingqi ^{[2
]}

Xiang, Yong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Energy Sci & Engn, Chengdu 611731, Sichuan, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

PROCEEDINGS OF THE 2016 5TH INTERNATIONAL CONFERENCE ON ENVIRONMENT, MATERIALS, CHEMISTRY AND POWER ELECTRONICS | 2016年 / 84卷

关键词：

Si/PEDOT:PSS; hybrid solar cells; SiNx:H passivation; CHEMICAL-VAPOR-DEPOSITION; SILICON-NITRIDE FILMS; TEMPERATURE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A patterned silicon nitride (SiNx:H) passivation layer was employed to improve the performance of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) (Si/PEDOT:PSS) hybrid solar cells, achieving of an enhancement in the power conversion efficiency (PCE) of 0.6%. The insertion of patterned SiNx:H layer with a 80% SiNx:H-to-substrate ratio boosted the open circuit voltage (V-oc) from 523.1 mV to 573.4 mV, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma enhanced chemical vapor deposition and lithography processes.

引用

页码：290 / 293

页数：4

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