Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

被引：6

作者：

Kelleher, C

Ginige, R

Corbett, B

Clarke, G

机构：

[1] NMRC, Cork, Ireland

[2] IQE, Cardiff CF3 OEG, S Glam, Wales

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1835537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics.

引用

页码：6033 / 6035

页数：3