ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS

被引：16

作者：

Dadlani, Anup L. ^{[1
]}

Acharya, Shinjita ^{[2
]}

Trejo, Orlando ^{[2
]}

Prinz, Fritz B. ^{[2
,3
]}

Torgersen, Jan ^{[2
]}

机构：

[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 23期

基金：

奥地利科学基金会;

关键词：

X-ray absorption near edge structure (XANES); Zn(O; S); atomic layer deposition (ALD); ternary oxide films; electronic structure; CU(IN; GA)SE-2; SOLAR-CELL; BUFFER LAYERS; ELECTRONIC-STRUCTURE; DAMP-HEAT; THICKNESS;

D O I：

10.1021/acsami.6b04000

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ability to precisely control interfaces of atomic layer deposited (ALD) zinc oxysulfide (Zn(O,S)) buffer layers to other layers allows precise tuning of solar cell performance. The O K- and S K-edge X-ray absorption near edge structure (XANES) of similar to 24 nm thin Zn(O,S) films reveals the chemical and structural influences of their interface with ZnO, a common electrode material and diffusion barrier in solar cells. We observe that sulfate formation at oxide/sulfide interfaces is independent of film composition, a result of sulfur diffusion toward interfaces. Leveraging sulfurs diffusivity, we propose an alternative ALD process in which the zinc precursor pulse is bypassed during H2S exposure. Such a process yields similar results to the nanolaminate deposition method and highlights mechanistic differences between ALD sulfides and oxides. By identifying chemical species and structural evolution at sulfide/oxide interfaces, this work provides insights into increasing thin film solar cell efficiencies.

引用

页码：14323 / 14327

页数：5

共 28 条

[1]

Adel C., 2014, Int. J. Phys. Sci, V9, P250

[2] Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition [J].