Depth- and time-resolved free carrier absorption in 4H SiC epilayers: A study of carrier recombination and transport parameters

被引：7

作者：

Grivickas, V

Linnros, J

Galeckas, A

机构：

[1] Royal Inst Technol, Dept Elect, S-16440 Stockholm, Sweden

[2] Vilnius State Univ, Inst Mat Res & Appl Sci, LT-2054 Vilnius, Lithuania

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

4H SiC; surface recombination velocity; carrier diffusion length; recombination lifetime;

D O I：

10.4028/www.scientific.net/MSF.264-268.529

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High spatial resolution of the photo-induced free carrier absorption (FCA) is carried out in n-type 4H SiC under a wide range of injection levels, 10(14)-10(18) cm(-3). Our results reveal a large surface recombination rate on the bare surface and on the n-n(+) interface. An actual carrier diffusion length of about 50 mu m and a mu s-long recombination lifetime were estimated. Shorter lifetimes have been deduced at high-level (HL) injection as compared to those at low-level (LL) injection.

引用

页码：529 / 532

页数：4

共 5 条

[1] Free carrier absorption and lifetime mapping in 4H SiC epilayers [J].