Optical characterisation of a-Si:H and nc-Si:H thin films using the transmission spectrum alone

被引：8

作者：

Halindintwali, S.

Knoesen, D.

Muller, T. F. G.

Adams, D.

Tile, N.

Theron, C. C.

Schropp, R. E. I.

机构：

[1] Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa

[2] Ithemba Labs, Mat Res Grp, ZA-7129 Somerset W, South Africa

[3] Univ Utrecht, SID Phys Devices, NL-3508 TA Utrecht, Netherlands

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / Suppl 1期

关键词：

D O I：

10.1007/s10854-007-9194-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the method proposed by Swanepoel (J Phys E: Sci Instrum 17:896-903, 1984), a-Si:H and nc-Si:H thin films have been successfully characterised using the transmission spectrum alone as taken in the UV-visible range. The studied samples were deposited on both Corning glass and Polyethylene napthalate (PEN) substrates using the Hot Wire Chemical Vapour deposition technique (HWCVD). Results on refractive index, absorption coefficient and energy gap will be presented. Thicknesses calculated by the same method will be compared to those obtained by direct measurement using a Dektak profilometer.

引用

页码：S225 / S229

页数：5

共 11 条

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