Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy

被引：21

作者：

Lee, Jinhyung ^{[1
]}

Kim, Jong Cheol ^{[2
,4
]}

Kim, Jongsik ^{[3
]}

Singh, Rajiv K. ^{[4
]}

Arjunan, Arul C. ^{[4
]}

Lee, Haigun ^{[2
]}

机构：

[1] SK Hynix, 2091 Gyeongchung Daero, Icheon Si 17336, Gyeonggi Do, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, 145 Anam Dong, Seoul 02841, South Korea

[3] Korea Inst Sci & Technol, 5 Hwarang Ro 14 Gil, Seoul 02792, South Korea

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

THIN SOLID FILMS | 2018年 / 660卷

基金：

美国国家科学基金会;

关键词：

Subsurface damage; Chemical mechanical polishing; Non-radiative recombination; Cathodoluminescence spectroscopy; Gallium nitride; GALLIUM NITRIDE; RECOMBINATION; DISLOCATIONS;

D O I：

10.1016/j.tsf.2018.07.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 mu m diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate.

引用

页码：516 / 520

页数：5

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