InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm

被引：211
|
作者：
Lott, JA
Ledentsov, NN
Ustinov, VM
Maleev, NA
Zhukov, AE
Kovsh, AR
Maximov, MV
Volovik, BV
Alferov, ZI
Bimberg, D
机构：
[1] USAF, Inst Technol, Dept Elect & Comp Engn, Wright Patterson AFB, OH 45433 USA
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[4] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 16期
关键词：
D O I：
10.1049/el:20000988
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pulsed lasing at 1.31 mu m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The structures are grown directly on GaAs substrates and when fabricated include selectively oxidised AlO current apertures, intracavity metal contacts, and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at room temperature with threshold currents below 2mA and differential slope efficiencies above 40%.
引用
收藏
页码：1384 / 1385
页数：2
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