Fracture strength and Young's modulus of ZnO nanowires

被引:123
作者
Hoffmann, S.
Oestlund, F.
Michler, J.
Fan, H. J.
Zacharias, M.
Christiansen, S. H.
Ballif, C.
机构
[1] EMPA Swiss Fed Labs Mat Testing & Res, CH-3602 Thun, Switzerland
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Univ Halle Wittenberg, D-06109 Halle, Germany
[4] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland
关键词
D O I
10.1088/0957-4484/18/20/205503
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The fracture strength of ZnO nanowires vertically grown on sapphire substrates was measured in tensile and bending experiments. Nanowires with diameters between 60 and 310 nm and a typical length of 2 mu m were manipulated with an atomic force microscopy tip mounted on a nanomanipulator inside a scanning electron microscope. The fracture strain of ( 7.7 +/- 0.8)% measured in the bending test was found to be close to the theoretical limit of 10% and revealed a strength about twice as high as in the tensile test. From the tensile experiments, the Young's modulus could be measured to be within 30% of that of bulk ZnO, contrary to the lower values found in the literature.
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页数:5
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共 17 条
[1]   Dual-mode mechanical resonance of individual ZnO nanobelts [J].
Bai, XD ;
Gao, PX ;
Wang, ZL ;
Wang, EG .
APPLIED PHYSICS LETTERS, 2003, 82 (26) :4806-4808
[2]   Size dependence of Young's modulus in ZnO nanowires [J].
Chen, CQ ;
Shi, Y ;
Zhang, YS ;
Zhu, J ;
Yan, YJ .
PHYSICAL REVIEW LETTERS, 2006, 96 (07)
[3]   Optical properties of ZnO nanostructures [J].
Djurisic, Aleksandra B. ;
Leung, Yu Hang .
SMALL, 2006, 2 (8-9) :944-961
[4]   Local luminescence of ZnO nanowire-covered surface:: A cathodoluminescence microscopy study -: art. no. 023113 [J].
Fan, HJ ;
Scholz, R ;
Zacharias, M ;
Gösele, U ;
Bertram, F ;
Forster, D ;
Christen, J .
APPLIED PHYSICS LETTERS, 2005, 86 (02) :023113-1
[5]   Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications [J].
Fan, HJ ;
Lee, W ;
Hauschild, R ;
Alexe, M ;
Le Rhun, G ;
Scholz, R ;
Dadgar, A ;
Nielsch, K ;
Kalt, H ;
Krost, A ;
Zacharias, M ;
Gösele, U .
SMALL, 2006, 2 (04) :561-568
[6]   Semiconductor nanowires: From self-organization to patterned growth [J].
Fan, HJ ;
Werner, P ;
Zacharias, M .
SMALL, 2006, 2 (06) :700-717
[7]   ZnO nanowire field-effect transistor and oxygen sensing property [J].
Fan, ZY ;
Wang, DW ;
Chang, PC ;
Tseng, WY ;
Lu, JG .
APPLIED PHYSICS LETTERS, 2004, 85 (24) :5923-5925
[8]   Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires [J].
Hoffmann, S ;
Utke, I ;
Moser, B ;
Michler, J ;
Christiansen, SH ;
Schmidt, V ;
Senz, S ;
Werner, P ;
Gösele, U ;
Ballif, C .
NANO LETTERS, 2006, 6 (04) :622-625
[9]   In situ mechanical properties of individual ZnO nanowires and the mass measurement of nanoparticles [J].
Huang, Yunhua ;
Bai, Xuedong ;
Zhang, Yue .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (15) :L179-L184
[10]   Ultraviolet electroluminescence from ZnO/polymer heterojunction light-emitting diodes [J].
Könenkamp, R ;
Word, RC ;
Godinez, M .
NANO LETTERS, 2005, 5 (10) :2005-2008