Fracture strength and Young's modulus of ZnO nanowires

被引:124
作者
Hoffmann, S.
Oestlund, F.
Michler, J.
Fan, H. J.
Zacharias, M.
Christiansen, S. H.
Ballif, C.
机构
[1] EMPA Swiss Fed Labs Mat Testing & Res, CH-3602 Thun, Switzerland
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] Univ Halle Wittenberg, D-06109 Halle, Germany
[4] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland
关键词
D O I
10.1088/0957-4484/18/20/205503
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The fracture strength of ZnO nanowires vertically grown on sapphire substrates was measured in tensile and bending experiments. Nanowires with diameters between 60 and 310 nm and a typical length of 2 mu m were manipulated with an atomic force microscopy tip mounted on a nanomanipulator inside a scanning electron microscope. The fracture strain of ( 7.7 +/- 0.8)% measured in the bending test was found to be close to the theoretical limit of 10% and revealed a strength about twice as high as in the tensile test. From the tensile experiments, the Young's modulus could be measured to be within 30% of that of bulk ZnO, contrary to the lower values found in the literature.
引用
收藏
页数:5
相关论文
共 17 条
  • [1] Dual-mode mechanical resonance of individual ZnO nanobelts
    Bai, XD
    Gao, PX
    Wang, ZL
    Wang, EG
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4806 - 4808
  • [2] Size dependence of Young's modulus in ZnO nanowires
    Chen, CQ
    Shi, Y
    Zhang, YS
    Zhu, J
    Yan, YJ
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (07)
  • [3] Optical properties of ZnO nanostructures
    Djurisic, Aleksandra B.
    Leung, Yu Hang
    [J]. SMALL, 2006, 2 (8-9) : 944 - 961
  • [4] Local luminescence of ZnO nanowire-covered surface:: A cathodoluminescence microscopy study -: art. no. 023113
    Fan, HJ
    Scholz, R
    Zacharias, M
    Gösele, U
    Bertram, F
    Forster, D
    Christen, J
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (02) : 023113 - 1
  • [5] Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications
    Fan, HJ
    Lee, W
    Hauschild, R
    Alexe, M
    Le Rhun, G
    Scholz, R
    Dadgar, A
    Nielsch, K
    Kalt, H
    Krost, A
    Zacharias, M
    Gösele, U
    [J]. SMALL, 2006, 2 (04) : 561 - 568
  • [6] Semiconductor nanowires: From self-organization to patterned growth
    Fan, HJ
    Werner, P
    Zacharias, M
    [J]. SMALL, 2006, 2 (06) : 700 - 717
  • [7] ZnO nanowire field-effect transistor and oxygen sensing property
    Fan, ZY
    Wang, DW
    Chang, PC
    Tseng, WY
    Lu, JG
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (24) : 5923 - 5925
  • [8] Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires
    Hoffmann, S
    Utke, I
    Moser, B
    Michler, J
    Christiansen, SH
    Schmidt, V
    Senz, S
    Werner, P
    Gösele, U
    Ballif, C
    [J]. NANO LETTERS, 2006, 6 (04) : 622 - 625
  • [9] In situ mechanical properties of individual ZnO nanowires and the mass measurement of nanoparticles
    Huang, Yunhua
    Bai, Xuedong
    Zhang, Yue
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (15) : L179 - L184
  • [10] Ultraviolet electroluminescence from ZnO/polymer heterojunction light-emitting diodes
    Könenkamp, R
    Word, RC
    Godinez, M
    [J]. NANO LETTERS, 2005, 5 (10) : 2005 - 2008