Analysis of injection current with electron temperature for high-K gate stacks

被引：0

作者：

Ohkura, Y ^{[1
]}

Takashino, H ^{[1
]}

Wakahara, S ^{[1
]}

Nishi, K ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 03期

关键词：

high-K; gate injection current; simulation; electron temperature;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Though, high dielectric constant material is a possible near future solution in order to suppress gate current densities of MOSFETs, the barrier height generally decreases with an increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.

引用

页码：325 / 329

页数：5