The temperature dependence of the optical absorption of an InAs-monolayer embedded in GaAs measured by means of photocurrent

被引：0

作者：

Pickenhain, R

Gottschalch, V

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Miota Expt Phys 2, D-04103 Leipzig, Germany

[2] Fak Chem & Mineral, Inst Anorgan Chem, D-04103 Leipzig, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1997年 / 164卷 / 01期

关键词：

D O I：

10.1002/1521-396X(199711)164:1<R3::AID-PSSA99993>3.0.CO;2-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：R3 / R4

页数：2

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