Density control of GaSb/GaAs self-assembled quantum dots (∼25nm) grown by molecular beam epitaxy

被引：32

作者：

Suzuki, K ^{[1
]}

Hogg, RA ^{[1
]}

Tachibana, K ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 2B期

关键词：

GaSb; quantum dots; nanostructures; Stranski-Krastanow growth mode; self-assembled; MBE; AFM; type-II;

D O I：

10.1143/JJAP.37.L203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of quantum-sized GaSb dots, of small diameter (similar to 25nm),on GaAs by molecular beam epitaxy in the Stranski-Krastanow growth mode. At the deposition of 3.1 mono-layer(ML) GaSb, the average diameter and height of GaSb quantum dot(QD) are 26 nm and 6.2 nm, respectively. In addition, the density control was systematically achieved between 2.6 x 10(9) to 1.2 x 10(10)cm(-2) by carefully choosing the amount of GaSb deposited from 2.5 to 3.1ML. The growth mechanism are discussed in detail. These results are very useful in forming a QD of staggered band lineup (type-II) of possible use in novel device applications.

引用

页码：L203 / L205

页数：3

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