MBE growth of FeSe and Sr1-xKxFe2As2

被引：34

作者：

Agatsuma, S. ^{[1
,2
]}

Yamagishi, T. ^{[1
,2
]}

Takeda, S. ^{[1
]}

Naito, M. ^{[1
,2
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Phys, Koganei, Tokyo 1848588, Japan

[2] Japan Sci & Technol Agcy, TRIP, Chiyoda Ku, Tokyo 1020075, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2010年 / 470卷 / 20期

关键词：

Molecular beam epitaxy; Iron-based superconductor; FeSe; Sr1-xKxFe2As2; Epitaxial films; Low-temperature growth; THIN-FILMS; 43; K; SUPERCONDUCTIVITY;

D O I：

10.1016/j.physc.2010.05.140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report molecular beam epitaxy growth of FeSe and Sr1-xKxFe2As2. In FeSe growth, the compositional window to obtain the superconducting phase (beta-FeSe) is very limited. The use of Al2O3-R substrates instead lattice-matched LaAlO3 substrates slightly expands the compositional window, and we observed a substantial drop of resistivity but with no zero resistivity attained. In Sr1-xKxFe2As2 growth, the largest problem is the volatility of K. Films grown at substrate temperatures higher than 300 degrees C contain no K. Superconducting films of Sr1-xKxFe2As2 can be obtained at the growth temperature of 250 degrees C with very low As flux. The best film has T-c(on) = 30.3K and T-c(end) = 22.9K. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1468 / 1472

页数：5

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