Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN

被引：9
|
作者：
Shubina, T. V. [1 ]
Glazov, M. M. [1 ,2 ]
Ivanov, S. V. [1 ]
Vasson, A. [2 ]
Leymarie, J. [2 ]
Monemar, B. [3 ]
Araki, T. [4 ]
Naoi, H. [4 ]
Nanishi, Y. [4 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] LASMEA UMR 6602, CNRS UBP, F-63177 Clermont Ferrand, France
[3] Linkoping Univ, S-58183 Linkoping, Sweden
[4] Ritsumeikan Univ, Shiga 5258577, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期
关键词：
D O I：
10.1002/pssc.200674908
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The empirical nearest-neighbor tight binding theory and the Harrison bond-orbital model are exploited to investigate the variation in effective band gap, electron effective masses and dielectric constants induced by non-stoichiometry. A model is proposed to describe absorption edges in heavily-doped InN using the Efros-Shklovslii approach for compensated semiconductors and taking into account the non-parabolicity of the InN band structure. Reasonable agreement with experimental trends has been demonstrated. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2474 / +
页数：2
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