Effects of non-stoichiometry and compensation on fundamental parameters of heavily-doped InN

被引：9

作者：

Shubina, T. V. ^{[1
]}

Glazov, M. M. ^{[1
,2
]}

Ivanov, S. V. ^{[1
]}

Vasson, A. ^{[2
]}

Leymarie, J. ^{[2
]}

Monemar, B. ^{[3
]}

Araki, T. ^{[4
]}

Naoi, H. ^{[4
]}

Nanishi, Y. ^{[4
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] LASMEA UMR 6602, CNRS UBP, F-63177 Clermont Ferrand, France

[3] Linkoping Univ, S-58183 Linkoping, Sweden

[4] Ritsumeikan Univ, Shiga 5258577, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674908

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The empirical nearest-neighbor tight binding theory and the Harrison bond-orbital model are exploited to investigate the variation in effective band gap, electron effective masses and dielectric constants induced by non-stoichiometry. A model is proposed to describe absorption edges in heavily-doped InN using the Efros-Shklovslii approach for compensated semiconductors and taking into account the non-parabolicity of the InN band structure. Reasonable agreement with experimental trends has been demonstrated. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2474 / +

页数：2

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