Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications

被引：65
作者：
Schwertberger, R [1 ]
Gold, D [1 ]
Reithmaier, JP [1 ]
Forchel, A [1 ]
机构：
[1] Univ Wurzburg, Inst Tech Phys, D-97074 Wurzburg, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
low dimensional structures; gas source molecular beam epitaxy; self-organized growth; quantum dashes; semiconducting III-V materials; laser diodes;
D O I：
10.1016/S0022-0248(02)02371-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Self-assembled InAs quantum dashes in the InP system were grown by gas source molecular beam epitaxy. Different growth parameters like buffer material, growth temperature and layer thickness were studied using scanning electron microscopy and photoluminescence measurements. Four layers of InAs dashes were embedded as active material in a SCH laser structure. Device data of broad area and ridge waveguide lasers are presented. Broad area lasers of 100 mum width showed a transparency threshold current density of 330 A/cm(2) and an internal efficiency of 62%. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：248 / 252
页数：5
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  • [1] InAs/InP(001) quantum wire formation due to anisotropic stress relaxation:: in situ stress measurements
    García, JM
    González, L
    González, MU
    Silveira, JP
    González, Y
    Briones, F
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 975 - 979
  • [2] Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
    Klopf, F
    Reithmaier, JP
    Forchel, A
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (10) : 1419 - 1421
  • [3] High-temperature operating 1.3-μm quantum-dot lasers for telecommunication applications
    Klopf, F
    Krebs, R
    Reithmaier, JP
    Forchel, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) : 764 - 766
  • [4] Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
    Liu, GT
    Stintz, A
    Li, H
    Malloy, KJ
    Lester, LF
    [J]. ELECTRONICS LETTERS, 1999, 35 (14) : 1163 - 1165
  • [5] High-performance GaInAs GaAs quantum-dot lasers based on a single active layer
    Schäfer, F
    Reithmaier, JP
    Forchel, A
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2915 - 2917
  • [6] Long-wavelength InP-based quantum-dash lasers
    Schwertberger, R
    Gold, D
    Reithmaier, JP
    Forchel, A
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (06) : 735 - 737
  • [7] Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
    Stintz, A
    Liu, GT
    Li, H
    Lester, LF
    Malloy, KJ
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (06) : 591 - 593
  • [8] Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots
    Sugawara, M
    Mukai, K
    Nakata, Y
    Otsubo, K
    Ishikawa, H
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) : 462 - 474
  • [9] Low-threshold quantum dot lasers with 201 nm tuning range
    Varangis, PM
    Li, H
    Liu, GT
    Newell, TC
    Stintz, A
    Fuchs, B
    Malloy, KJ
    Lester, LF
    [J]. ELECTRONICS LETTERS, 2000, 36 (18) : 1544 - 1545
  • [10] Room-temperature operation of InAs quantum-dash lasers on InP (001)
    Wang, RH
    Stintz, A
    Varangis, PM
    Newell, TC
    Li, H
    Malloy, KJ
    Lester, LF
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) : 767 - 769
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