Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He Ion Irradiation

被引：12
作者：
Gao, Run-Long [1 ]
Liu, Lin-Yue [2 ]
Ruan, Jin-Lu [2 ]
Jin, Peng [2 ]
Ouyang, Xiao [3 ]
Zhou, Lei-Dang [4 ]
Li, Yang [5 ]
Zhang, Si-Long [6 ]
Zhao, Kuo [2 ]
Ouyang, Xiao-Ping [1 ,2 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China
[2] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China
[3] Tsinghua Univ, Inst Nucl & New Energy Technol, Beijing 100084, Peoples R China
[4] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China
[5] Nanjing Univ Aeronaut & Astronaut, Inst Coll Mat Sci & Technol, Nanjing 211106, Peoples R China
[6] Xiangtan Univ, Inst Mat Sci & Engn, Xiangtan 411105, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 05期
基金：
中国国家自然科学基金;
关键词：
He ion irradiation; performance degradation; silicon carbide (SiC) detector; SCHOTTKY DIODES; NEUTRON; RADIATION; PROTON; PERFORMANCE;
D O I：
10.1109/TNS.2021.3069568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon carbide (SiC) detectors have great potential in nuclear fusion diagnosis and intense irradiation field measurement due to their outstanding irradiation resistance, high charge collection efficiency (CCE), and fast pulse response time. However, the irradiation resistance and the performance degradation of SiC detectors as a result of He ion irradiation remains unclear. In this article, SiC detectors based on 4H-type material with the p-i-n junction structure were prepared, and their I-V characteristics, alpha-particle spectra, and linearity of energy response were evaluated before and after He ion irradiation at fluences ranging from 1 x 10(12) to 3 x 10(15) cm(-2). The preirradiated SiC detector exhibited low dark current (<1 nA), high CCE (98.5%), and good energy resolution (0.87%). At an He ion irradiation fluence of 1 x 10(12) cm(-2), detector performance degradation was negligible, with no increase of dark current, CCE decreased to 85%, and a 2.2% degradation of energy resolution. At a fluence of 3 x 10(15) cm(-2), CCE decreased to 19.3%, with an 8.57% degradation in energy resolution, but the dark current was still lower than 2 nA, with good spectra measurement capabilities and high linearity of energy response. These results indicate that the He ion irradiation resistance of 4H-SiC detectors is 10(4) times greater than silicon (Si) detectors.
引用
收藏
页码：1169 / 1174
页数：6
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