Difference in nature of photoinduced defects and structural instability between surroundings of Si-H and Si-H2 bonds in a-Si:H

被引：0

作者：

Oheda, Hidetoshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

Physics of Semiconductors, Pts A and B | 2007年 / 893卷

关键词：

amorphous silicon; structural instability; infrared absorption;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The difference in structural instability between Surroundings of the Si-H and Si-H-2 bonds is studied by observing modulated IR absorption. The result is discussed in connection with the difference in nature of defects depending on their creation temperature.

引用

页码：129 / 130

页数：2

共 3 条

[1] Site-dependent structural instability at the surroundings of the Si-H bond in hydrogenated amorphous silicon based wide-gap alloys
Oheda, H
[J]. PHYSICAL REVIEW B, 2004, 69 (24) : 245203 - 1
[2] Photoinduced structural instability around the Si-H bond in undoped hydrogenated amorphous silicon
Oheda, H
[J]. PHYSICAL REVIEW B, 2003, 68 (08):
[3] Real-time modulation of Si-H vibration in hydrogenated amorphous silicon
Oheda, H
[J]. PHYSICAL REVIEW B, 1999, 60 (24) : 16531 - 16542

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