Simulation approach of atomic layer deposition in large 3D structures

被引：9
|
作者：
Schwille, Matthias C. [1 ]
Barth, Jonas [1 ]
Schoessler, Timo [1 ]
Schoen, Florian [1 ]
Bartha, Johann W. [2 ]
Oettel, Martin [3 ]
机构：
[1] Robert Bosch GmbH, D-72762 Reutlingen, Germany
[2] Tech Univ Dresden, Dept Elect Engn & Informat Technol, IHM, D-01062 Dresden, Germany
[3] Tuebingen Univ, Inst Appl Phys, D-72076 Tubingen, Germany
来源：
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING | 2017年 / 25卷 / 03期
关键词：
thin films; atomic layer deposition; growth simulation; TUBES; MODEL;
D O I：
10.1088/1361-651X/aa5f9d
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a new simulation method predicting thicknesses of thin films obtained by atomic layer deposition in high aspect ratio 3D geometries as they appear in MEMS manufacturing. The method features a Monte-Carlo computation of film deposition in free molecular flow, as well as in the Knudsen and diffusive gas regime, applicable for large structures. We compare our approach to analytic and simulation results from the literature. The capability of the method is demonstrated by a comparison to experimental film thicknesses in a large 3D structure. Finally, the feasability to extract process parameters, i.e. sticking coefficients is shown.
引用
收藏
页数：18
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