Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method

被引：0
|
作者：
Tsuchiya, Toshiaki [1 ]
Hori, Masahiro [1 ]
Ono, Yukinori [1 ]
机构：
[1] Shizuoka Univ, Res Inst Elect, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan
来源：
2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2018年
关键词：
MOS; Si/SiO2; inteface; Single traps; Single near-interface oxide-traps; Charge pumping; Single defects; Single defect characterization; TRIVALENT SILICON CENTERS; SI/SIO2; INTERFACE; RESONANCE; DEVICES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We carried out detection and characterization of single Si/SiO2 near-interface oxide-traps (NIOTs) using the systematic measurements procedure by the high-resolution charge pumping (CP) method we developed, and we found a single NIOT where CP current depends upon both fall and rise times of the CP gate pulse. This demonstrates that individual Si/SiO2 NIOTs have two energy levels, one in the upper part, the other in the lower part of the silicon bandgap. The results may suggest that the NIOTs also have an amphoteric nature, i.e., have both donor-like one-electron, and acceptor-like two-electrons states, similar to the Si/SiO2 interface traps.
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页数：4
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