Crystalline ripples at the surface of ion eroded strained Si0.8Ge0.2 epilayers

被引：1
作者：
Kanjilal, A. [1 ]
Prucnal, S. [1 ]
Minniti, M. [1 ]
Skorupa, W. [1 ]
Helm, M. [1 ]
Facsko, S. [1 ]
机构：
[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 07期
关键词：
D-BAND LUMINESCENCE; SI-GE ALLOYS; SI1-XGEX; NANOSTRUCTURES; GE(001);
D O I：
10.1063/1.3369391
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface erosion of a strained Si0.8Ge0.2 epilayer by 500 eV Ar+ ions with a fluence of 4 X 10(17) ions/cm(2) and the transformation from crystalline ripples to elongated Ge islands are reported by aligning the beam from 69 to 50 from the surface normal. Crystalline nature and the near surface Ge enrichment in such ripple structures are revealed by transmission electron microscopy. Moreover, ion beam induced decomposition of the SiGe network and the appearance of dislocation bands by suppressing the near-bandgap emission are manifested by mu-Raman and photoluminescence studies, respectively. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3369391]
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页数：4
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