On the formation of stationary destructive cathode-side filaments in p+-n--n+ diodes

被引:23
作者
Baburske, Roman [1 ]
Heinze, Birk [1 ]
Niedernostheide, Franz-Josef [2 ]
Lutz, Josef [1 ]
Silber, Dieter [3 ]
机构
[1] Tech Univ Chemnitz, Chair Power Elect & EMC, Chemnitz, Germany
[2] Infineon Technol AG, Neubiberg, Germany
[3] Univ Bremen, D-28359 Bremen, Germany
来源
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2009年
关键词
REVERSE-RECOVERY; INJECTION;
D O I
10.1109/ISPSD.2009.5157996
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Analyzing the dynamics of current filaments is essential for a correct understanding of SOA limitations. Current filaments can occur during the reverse-recovery period of p(+)-n(-)-n(+) diodes. In this work, we apply the results from an analysis of the plasma-front dynamics for the one-dimensional case to conditions under which current filaments appear in the depletion layers due to dynamic avalanche. We show that the anode-side plasma front velocity is higher in the vicinity of the filament than far away from the filament center, favoring the evolution of a lateral traveling anode-side filament. Furthermore, we find that the cathode-side plasma front changes its vertical propagation direction when a dynamic avalanche in the cathode-side depletion layer causes current crowding. As a result, the cathode-side depletion layer in the vicinity of the filament decreases, favoring the formation of a standing cathode-side filament that may cause final destruction of the device. The analytical results are in good agreement with numerical simulations and results of previously published work.
引用
收藏
页码:41 / +
页数:2
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