Temperature dependence of ESD charging in RF MEMS capacitive switch

被引：0
作者：
Ruan, J. [1 ]
Papaioannou, G. J. [1 ]
Nolhier, N. [1 ]
Tremouilles, D. [1 ]
Coccetti, F. [1 ]
Plana, R. [1 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The paper presents analyses of the dielectric charging in RF-MEMS devices that have been submitted to electrostatic discharge (ESD) stress. A wafer level Human Body Model (HBM) tester has been used to generate discharge signals. The investigation intends to understand the failure mechanism and the charging mechanism in capacitive RF-MEMS due to ESD. The experiments were done on MEMS and also on Metal-Insulator-Metal (MIM) devices, fabricated on the same wafer in order to get insight on failure modes and charging models. Furthermore, temperature ranges from 300 K to 330 K allows the understanding of physical mechanisms that may be responsible for the device's reliability.
引用
收藏
页码：403 / 406
页数：4
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