Epitaxial growth of manganese silicide nanowires on Si(111)-7x7 surfaces

被引：25
作者：
Zou, Z. -Q.
Wang, H.
Wang, D.
Wang, Q. -K.
Mao, J. -J.
Kong, X. -Y.
机构：
[1] Shanghai Jiao Tong Univ, Ctr Phys & Chem Anal, Shanghai 200030, Peoples R China
[2] Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Shanghai 200030, Peoples R China
[3] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2717580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reactive epitaxial growth of manganese silicide on a Si(111)-7x7 surface at low coverage is studied using scanning tunneling microscopy. Besides tabular and three-dimensional islands observed previously on the Mn/Si system, Mn silicide is found to form nanowires (NWs) on the Si(111)-7x7 surface at temperatures above similar to 500 degrees C. The NWs oriented along [101], [011], and [110], three equivalent directions, with equal probability. Well-ordered atomic arrangement observed on an ultrafine NW indicates that the NWs are crystalline. Scanning tunneling spectroscopy measurements show that the NWs exhibit a semiconducting character with a band gap of similar to 0.8 eV, which is consistent with that of bulk MnSi1.7. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 24 条
[1]   Mn clusters on Si(111) surface: STM investigation [J].
Azatyan, SG ;
Iwami, M ;
Lifshits, VG .
SURFACE SCIENCE, 2005, 589 (1-3) :106-113
[2]   Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy [J].
Bennett, PA ;
Ashcroft, B ;
He, Z ;
Tromp, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06) :2500-2504
[3]   SCANNING-TUNNELING-MICROSCOPY STUDIES OF NUCLEATION AND GROWTH IN A REACTIVE, EPITAXIAL SYSTEM - CO/SI(111) [J].
BENNETT, PA ;
PARIKH, SA ;
CAHILL, DG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1680-1685
[4]   AN OPTICAL DETERMINATION OF THE BANDGAP OF THE MOST SILICON-RICH MANGANESE SILICIDE PHASE [J].
BOST, MC ;
MAHAN, JE .
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (06) :389-395
[5]   FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON NORMAL-TYPE SILICON [J].
EIZENBERG, M ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6885-6890
[6]   Epitaxial growth of manganese on silicon: Volmer-Weber growth on the Si(111) surface [J].
Evans, MMR ;
Glueckstein, JC ;
Nogami, J .
PHYSICAL REVIEW B, 1996, 53 (07) :4000-4004
[7]   Epitaxial DySi2 nanowire formation on stepped si(111) -: art. no. 143110 [J].
He, Z ;
Smith, DJ ;
Bennett, PA .
APPLIED PHYSICS LETTERS, 2005, 86 (14) :1-3
[8]   Endotaxial silicide nanowires [J].
He, ZA ;
Smith, DJ ;
Bennett, PA .
PHYSICAL REVIEW LETTERS, 2004, 93 (25) :256102-1
[9]   Epitaxial titanium silicide islands and nanowires [J].
He, ZA ;
Stevens, M ;
Smith, DJ ;
Bennett, PA .
SURFACE SCIENCE, 2003, 524 (1-3) :148-156
[10]   CRYSTAL-GROWTH OF MANGANESE SILICIDE, MNSI APPROXIMATELY 1.73 AND SEMICONDUCTING PROPERTIES OF MN15SI26 [J].
KAWASUMI, I ;
SAKATA, M ;
NISHIDA, I ;
MASUMOTO, K .
JOURNAL OF MATERIALS SCIENCE, 1981, 16 (02) :355-366
123