A High-Speed and Ultra Low-Power Subthreshold Signal Level Shifter

被引:43
作者
Maghsoudloo, Esmaeel [1 ]
Rezaei, Masoud [1 ]
Sawan, Mohamad [2 ]
Gosselin, Benoit [1 ]
机构
[1] Univ Laval, Dept Elect & Comp Engn, Quebec City, PQ G1V 0A6, Canada
[2] Polytech Montreal, Dept Elect Engn, Polystim Neurotechnol Lab, Montreal, PQ H3C 3A7, Canada
关键词
Dual-supply; level shifter; subthreshold operation; ultra low-power; WILSON CURRENT MIRROR; LOW-VOLTAGE;
D O I
10.1109/TCSI.2016.2633430
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a novel level shifter circuit converting subthreshold signal levels to super-threshold signal levels at high-speed using ultra low-power and a small silicon area, making it well-suited for low-power applications such as wireless sensor networks and implantable medical devices. The proposed circuit introduces a new voltage level shifter topology employing a level-shifting capacitor contributing to increase the range of conversion voltages, while significantly reducing the conversion delay. Such a level-shifting capacitor is quickly charged, whenever the input signal detects a low-to-high transition, in order to boost internal voltage nodes, and quickly reach a high output voltage level. The proposed circuit achieves a shorter propagation delay and a smaller silicon area for a given operating frequency and power consumption compared to other circuit solutions. Measurement results are presented for the proposed circuit fabricated in a 0.18-mu m TSMC technology. The proposed circuit can convert a wide range of the input voltages from 330 mV to 1.8 V, and operate over a frequency range of 100 Hz to 100 MHz. It has a propagation delay of 29 ns and a power consumption of 61.5 nW for input signals 0.4 V, at a frequency of 500-kHz, outperforming previous designs.
引用
收藏
页码:1164 / 1172
页数:9
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