Dopant spatial distributions: Sample-independent response function and maximum-entropy reconstruction
被引:36
|
作者:
Chu, DP
论文数: 0引用数: 0
h-index: 0
机构:
Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Chu, DP
[1
]
Dowsett, MG
论文数: 0引用数: 0
h-index: 0
机构:
Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandUniv Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
Dowsett, MG
[1
]
机构:
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源:
PHYSICAL REVIEW B
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1997年
/
56卷
/
23期
关键词:
D O I:
10.1103/PhysRevB.56.15167
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribution from the secondary ion mass spectrometry (SIMS) depth profiles on a system of variously spaced boron delta layers grown in silicon. sample-independent response functions are obtained using a new method that reduces the danger of incorporating real sample behavior in the response. Although the original profiles of different primary ion energies appear quite differently, the reconstructed distributions agree well with each other. The depth resolution in the reconstructed data is increased significantly and segregation of boron at the near surface side of the delta layers is clearly shown.