Monte Carlo simulation of electron transport in a carbon nanotube

被引:0
作者
Pennington, G [1 ]
Goldsman, N [1 ]
机构
[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
来源
SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2002年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We use the Monte Carlo method to simulate electron transport in a zig-zag single-walled carbon nanotube with a wrapping index of n=10. Results show large low-field mobility, negative differential mobility, and large peaks in the drift velocity reaching 3X10(7) cm/s.
引用
收藏
页码:279 / 282
页数:4
相关论文
共 11 条
[1]  
Ashcroft N. W., 1973, SOLID STATE PHYS
[2]   Logic circuits with carbon nanotube transistors [J].
Bachtold, A ;
Hadley, P ;
Nakanishi, T ;
Dekker, C .
SCIENCE, 2001, 294 (5545) :1317-1320
[3]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[4]   Electron-phonon interaction in single-wall carbon nanotubes: A time-domain study [J].
Hertel, T ;
Moos, G .
PHYSICAL REVIEW LETTERS, 2000, 84 (21) :5002-5005
[5]   TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].
HILSUM, C .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&
[6]  
Jacoboni C., 1989, The Monte Carlo method for semiconductor device simulation, V1st, DOI DOI 10.1007/978-3-7091-6963-6
[7]  
Ridley B. K., 1982, QUANTUM PROCESSES SE
[8]  
Saito R., 1998, PHYS PROPERTIES CARB, DOI [10.1016/j.physrep.2004.10.006, DOI 10.1016/J.PHYSREP.2004.10.006]
[9]  
SHUR M, 1990, PHYSICS SEMICONDUCTI
[10]   Room-temperature transistor based on a single carbon nanotube [J].
Tans, SJ ;
Verschueren, ARM ;
Dekker, C .
NATURE, 1998, 393 (6680) :49-52