Modeling and experimental study of resistive switching in vertically aligned carbon nanotubes

被引：8
作者：
Ageev, O. A. [1 ]
Blinov, Yu F. [1 ]
Ilina, M. V. [1 ]
Ilin, O. I. [1 ]
Smirnov, V. A. [1 ]
机构：
[1] Southern Fed Univ, Inst Nanotechnol Elect & Elect Equipment Engn, St Shevchenko 2, Taganrog 347928, Russia
来源：
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1088/1742-6596/741/1/012168
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Model of the resistive switching in vertically aligned carbon nanotube (VA CNT) taking into account the processes of deformation, polarization and piezoelectric charge accumulation have been developed. Origin of hysteresis in VA CNT-based structure is described. Based on modeling results the VACNTs-based structure has been created. The ration resistance of high-resistance to low-resistance states of the VACNTs-based structure amounts 48. The correlation the modeling results with experimental studies is shown. The results can be used in the development nanoelectronics devices based on VA CNTs, including the nonvolatile resistive random-access memory.
引用
收藏
页数：5
相关论文
共 14 条
[1]   Development of a technique for determining Young's modulus of vertically aligned carbon nanotubes using the nanoindentation method [J].
Ageev, O.A. ;
Il'in, O.I. ;
Kolomiitsev, A.S. ;
Konoplev, B.G. ;
Rubashkina, M.V. ;
Smirnov, V.A. ;
Fedotov, A.A. .
Nanotechnologies in Russia, 2012, 7 (01) :47-53
[2]   Study of the resistive switching of vertically aligned carbon nanotubes by scanning tunneling microscopy [J].
Ageev, O. A. ;
Blinov, Yu. F. ;
Il'in, O. I. ;
Konoplev, B. G. ;
Rubashkina, M. V. ;
Smirnov, V. A. ;
Fedotov, A. A. .
PHYSICS OF THE SOLID STATE, 2015, 57 (04) :825-831
[3]   Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy [J].
Ageev, O. A. ;
Blinov, Yu. F. ;
Il'in, O. I. ;
Kolomiitsev, A. S. ;
Konoplev, B. G. ;
Rubashkina, M. V. ;
Smirnov, V. A. ;
Fedotov, A. A. .
TECHNICAL PHYSICS, 2013, 58 (12) :1831-1836
[4]  
Ageev O.A., 2016, ADV MAT MANUFACTURIN, V2016, P563
[5]   Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].
Akinaga, Hiroyuki ;
Shima, Hisashi .
PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2237-2251
[6]   Nanotube-based data storage devices [J].
Bichoutskaia, Elena ;
Popov, Andrei M. ;
Lozovik, Yurij E. .
MATERIALS TODAY, 2008, 11 (06) :38-43
[7]   Controlled growth and modification of vertically-aligned carbon nanotubes for multifunctional applications [J].
Chen, Hao ;
Roy, Ajit ;
Baek, Jong-Beom ;
Zhu, Lin ;
Qu, Jia ;
Dai, Liming .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2010, 70 (3-6) :63-91
[8]   Resistance switching memories are memristors [J].
Chua, Leon .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (04) :765-783
[9]   Piezoelectric enhanced cross-linked multi-walled carbon nanotube paper [J].
Gao, Yulai ;
Zhai, Qijie ;
Barrett, Ryan ;
Dalal, Naresh S. ;
Kroto, Harold W. ;
Acquah, Steve F. A. .
CARBON, 2013, 64 :544-547
[10]   Nanoelectromechanical switches with vertically aligned carbon nanotubes [J].
Jang, JE ;
Cha, SN ;
Choi, Y ;
Amaratunga, GAJ ;
Kang, DJ ;
Hasko, DG ;
Jung, JE ;
Kim, JM .
APPLIED PHYSICS LETTERS, 2005, 87 (16) :1-3
12