Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

被引:38
|
作者
Rong, Xin [1 ]
Wang, Xinqiang [1 ,2 ]
Chen, Guang [1 ]
Pan, Jianhai [1 ]
Wang, Ping [1 ]
Liu, Huapeng [1 ]
Xu, Fujun [1 ]
Tan, Pingheng [3 ]
Shen, Bo [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
Raman scattering; Aluminium nitride; Molecular beam epitaxy; PHONON DEFORMATION POTENTIALS; RAMAN-SCATTERING; GAN; TEMPERATURE; LAYER;
D O I
10.1016/j.spmi.2016.02.050
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E-2(high) mode are experimentally determined to be 657.8 +/- 0.3 cm(-1) and 2.4 +/- 0.2 cm(-1) /GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:27 / 31
页数:5
相关论文
共 50 条
  • [21] Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy
    Hyndman, Adam. R.
    Allen, Martin. W.
    Reeves, Roger. J.
    OXIDE-BASED MATERIALS AND DEVICES VI, 2015, 9364
  • [22] Electrical and optical properties of ZnO films grown by molecular beam epitaxy
    Wang, S. P.
    Shan, C. X.
    Yao, B.
    Li, B. H.
    Zhang, J. Y.
    Zhao, D. X.
    Shen, D. Z.
    Fan, X. W.
    APPLIED SURFACE SCIENCE, 2009, 255 (09) : 4913 - 4915
  • [23] Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy
    Han, Seok Kyu
    Hong, Soon-Ku
    Lee, Jae Wook
    Kim, Jae Goo
    Jeong, Myoungho
    Lee, Jeong Yong
    Hong, Sun Ig
    Park, Jin Sub
    Ihm, Young Eon
    Ha, Jun-Seok
    Yao, Takafumi
    THIN SOLID FILMS, 2011, 519 (19) : 6394 - 6398
  • [24] Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy
    Wei, Yanping
    Gao, Cunxu
    Dong, Chunhui
    Ma, Zhikun
    Li, Jiangong
    Xue, Desheng
    APPLIED SURFACE SCIENCE, 2014, 293 : 71 - 75
  • [25] Optical properties of InN films grown by molecular beam epitaxy at different conditions
    Chen, P. P.
    Makino, H.
    Li, T. X.
    Wang, J. B.
    Lu, W.
    Yao, T.
    THIN SOLID FILMS, 2006, 513 (1-2) : 166 - 169
  • [26] Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy
    Ratnikov, V. V.
    Nechaev, D. V.
    Myasoedov, A. V.
    Koshelev, O. A.
    Zhmerik, V. N.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (04) : 389 - 392
  • [27] Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy
    V. V. Ratnikov
    D. V. Nechaev
    A. V. Myasoedov
    O. A. Koshelev
    V. N. Zhmerik
    Technical Physics Letters, 2020, 46 : 389 - 392
  • [28] Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy
    Tripathy, S
    Soni, RK
    Asahi, H
    Gonda, S
    PHYSICA B-CONDENSED MATTER, 2000, 275 (04) : 301 - 307
  • [29] Molecular-beam epitaxy of ultrathin Si films on sapphire
    Shilyaev, P. A.
    Pavlov, D. A.
    Korotkov, E. V.
    Treushnikov, M. V.
    MICRO- AND NANOELECTRONICS 2007, 2008, 7025
  • [30] Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire
    Talwar, Devki N.
    Liao, Ying Chieh
    Chen, Li Chyong
    Chen, Kuei Hsien
    Feng, Zhe Chuan
    OPTICAL MATERIALS, 2014, 37 : 1 - 4