Terahertz generation and detection of 1550-nm-excited LT-GaAs photoconductive antennas

被引：6

作者：

Bai, Zhi-Chen ^{[1
]}

Liu, Xin ^{[1
]}

Ding, Jing ^{[1
]}

Cui, Hai-Lin ^{[1
]}

Su, Bo ^{[1
]}

Zhang, Cun-Lin ^{[1
]}

机构：

[1] Capital Normal Univ, Dept Phys,Key Lab Terahertz Optoelect, Beijing Adv Innovat Ctr Imaging Theory & Technol, Beijing Key Lab Terahertz Spect & Imaging,Minist, Beijing 100048, Peoples R China

来源：

JOURNAL OF MODERN OPTICS | 2021年 / 68卷 / 15期

基金：

中国国家自然科学基金;

关键词：

Terahertz; LT-GaAs; photoconductive antenna; TEMPERATURE-GROWN GAAS; RADIATION;

D O I：

10.1080/09500340.2021.1950230

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Terahertz generation and detection is the key means to explore terahertz spectrum, one of which is the application of photoconductive antenna. In this study, a low-temperature gallium arsenide (LT-GaAs) epitaxial wafer antenna and an LT-GaAs thin-film antenna were fabricated. The LT-GaAs epitaxial wafer antenna was fabricated using an epitaxial wafer composed of LT-GaAs, AlAs,GaAs, and semi-insulating GaAs. An LT-GaAs thin film was obtained by etching the AlAs layer in the epitaxial wafer and then transferring it to a clean silicon wafer to fabricate the LT-GaAs thin-film antenna. The LT-GaAs epitaxial wafer and thin-film antennas were used as the generation and detection antennas, respectively. The two antennas were directly aligned at a distance of 2 mm from each other and placed into a self-made measurement system for detection. A THz spectrum of approximately 2.5 THz was obtained under 1550-nm laser excitation, thus verifying the antenna performance.

引用

页码：824 / 829

页数：6

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