Electronic structure as a function of temperature for Si δ-doped quantum wells in GaAs

被引：0
作者：
Gaggero-Sager, L. M. [1 ]
Moreno-Martinez, N. [1 ]
Rodriguez-Vargas, I. [1 ]
Perez-Alvarez, R. [1 ]
Grimalsky, V. V. [1 ]
Mora-Ramos, M. E. [1 ]
机构：
[1] Univ Autonoma Estado Morelos, Fac Ciencias, Av Univ 1001, Cuernavaca 62210, Morelos, Mexico
来源：
PIERS 2007 BEIJING: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, PTS I AND II, PROCEEDINGS | 2007年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic structure of a delta-doped quantum well of Si in GaAs matrix is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the occupation numbers of the discrete states are reported.
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页码：589 / +
页数：3
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