Characteristics of Mg doped TiO2 thin film based deep UV photodetector

被引:24
作者
Dalal, Avijit [1 ]
Mishra, Madhuri [2 ]
Chakrabarti, Subhananda [3 ]
Gupta, Rajeev Kumar [4 ]
Mondal, Aniruddha [1 ]
机构
[1] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209, West Bengal, India
[2] Indian Inst Technol, Ctr Res Nano Technol & Sci, Mumbai 400076, Maharashtra, India
[3] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
[4] Univ Petr, Sch Engn, Dept Phys, Energy Studies, Dehra Dun 248007, Uttarakhand, India
关键词
Electron beam evaporation system; Mg doped TiO2 thin film; AFM; Modified urbach equation; Deep UV detector; RAY PHOTOELECTRON-SPECTROSCOPY; PERFORMANCE; DEPOSITION; DETECTOR; LIGHT; TAIL;
D O I
10.1016/j.vacuum.2022.111115
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Co-doping of Mg into chemically stable TiO2 thin film is attractive for deep UV detection. In this report, we have fabricated-110 nm undoped TiO2 thin film and Mg doped TiO2 thin film based photodetectors on p-type Silicone substrates. The Mg doped TiO2 thin film shows good hydrophobicity. The undoped TiO2 thin film shows low deep UV besides high responsivity in the visible region. The Mg:TiO2 photodetector shows a maximum of four times superior light sensitivity as compared to undoped TiO2 thin film at 200 nm illumination. The Mg:TiO2 thin film shows the countable temporal response at 290 nm but the detector possesses low responsivity in the visible region.
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页数:9
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