Magnetic field induced rearrangement of the electric field domains in weakly coupled superlattices

We present an investigation of the electric field domain configuration in the sequential tunneling regime in weakly coupled superlattices in the presence of a magnetic field applied parallel to the quantum well layers. We show that, for an applied bias such that two electric field domains are present in the sample, as the magnetic field is increased a succession of discontinuous reductions in the electrical resistance is observed due to a magnetic field-induced rearrangement of the electric field domains. For a specially designed sample, which has one larger quantum well, the electric field domain configuration triggered by the magnetic field remains stable after the field is reduced back to zero, in what constitutes a "memory" effect in the sense that the electrical resistance of the sample after application of the magnetic field is different than before.