Low-threshold-current 1.2-1.5 μm laser diodes based on AlInGaAs/InP heterostructures

被引：13

作者：

Slipchenko, SO ^{[1
]}

Lyutetskii, AV

Pikhtin, NA

Fetisova, NV

Leshko, AY

Ryaboshtan, YA

Golikova, EG

Tarasov, IS

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[2] SigmaPlus Co, Moscow, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 02期

关键词：

D O I：

10.1134/1.1558742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Separate confinement AlInGaAs/InP multiwell laser heterostructures emitting in a wavelength range of 1.2-1.5 mum have been synthesized by metalorganic vapor-phase epitaxy. The threshold current of laser diodes with a strip width of 4.5 mum and a cavity length of 200 mum was as low as 10 mA. With a cavity length of 1.0 mm, the threshold current density was 500-650 A/cm(2) . The laser diodes can operate in a continuous regime without forced cooling at an ambient temperature of up to 170degreesC. In a temperature range from 10 to 80degreesC, the characteristic temperature parameter T-0 reached up to 110 K. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：115 / 118

页数：4

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