Light induced microstructure transformation in a-Si:H films

被引：0
作者：
Liu Guo-Han [1 ]
Yi, Ding
Zhang Wen-Li
Chen Guang-Hua
He De-Yan
Deng Jin-Xiang
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[2] Gansu Acad Sci, Inst Sensor Technol, Lanzhou 730000, Peoples R China
[3] Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ China, Beijing 100022, Peoples R China
来源：
CHINESE PHYSICS | 2007年 / 16卷 / 04期
关键词：
hydrogenated amorphous silicon; Staebler-Wronski effect; microwave electron cyclotron resonant chemical vapour deposition;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.
引用
收藏
页码：1125 / 1128
页数：4
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