Light induced microstructure transformation in a-Si:H films

被引：0
作者：
Liu Guo-Han [1 ]
Yi, Ding
Zhang Wen-Li
Chen Guang-Hua
He De-Yan
Deng Jin-Xiang
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[2] Gansu Acad Sci, Inst Sensor Technol, Lanzhou 730000, Peoples R China
[3] Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ China, Beijing 100022, Peoples R China
来源：
CHINESE PHYSICS | 2007年 / 16卷 / 04期
关键词：
hydrogenated amorphous silicon; Staebler-Wronski effect; microwave electron cyclotron resonant chemical vapour deposition;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.
引用
收藏
页码：1125 / 1128
页数：4
相关论文
共 18 条
  • [1] Light-induced D diffusion measurements in hydrogenated amorphous silicon: Testing H metastability models
    Branz, HM
    Asher, S
    Gleskova, H
    Wagner, S
    [J]. PHYSICAL REVIEW B, 1999, 59 (08): : 5513 - 5520
  • [2] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [3] OBSERVATION BY INFRARED TRANSMISSION SPECTROSCOPY AND INFRARED ELLIPSOMETRY OF A NEW HYDROGEN-BOND DURING LIGHT-SOAKING OF A-SI-H
    DARWICH, R
    CABARROCAS, PRI
    VALLON, S
    OSSIKOVSKI, R
    MORIN, P
    ZELLAMA, K
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 72 (03): : 363 - 372
  • [4] Ding Y, 2006, CHINESE PHYS, V15, P813, DOI 10.1088/1009-1963/15/4/024
  • [5] DING Y, IN PRESS VACUUM
  • [6] Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films
    Han, DX
    Baugh, J
    Yue, GZ
    Wang, Q
    [J]. PHYSICAL REVIEW B, 2000, 62 (11): : 7169 - 7178
  • [7] INFRARED-ABSORPTION STRENGTH AND HYDROGEN CONTENT OF HYDROGENATED AMORPHOUS-SILICON
    LANGFORD, AA
    FLEET, ML
    NELSON, BP
    LANFORD, WA
    MALEY, N
    [J]. PHYSICAL REVIEW B, 1992, 45 (23): : 13367 - 13377
  • [8] Role of interstitial hydrogen and voids in light-induced metastable defect formation in hydrogenated amorphous silicon: A model
    Longeaud, C
    Roy, D
    Saadane, O
    [J]. PHYSICAL REVIEW B, 2002, 65 (08) : 1 - 9
  • [9] Si-H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction
    Mahan, AH
    Gedvilas, LM
    Webb, JD
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1650 - 1658
  • [10] CRITICAL INVESTIGATION OF THE INFRARED-TRANSMISSION-DATA ANALYSIS OF HYDROGENATED AMORPHOUS-SILICON ALLOYS
    MALEY, N
    [J]. PHYSICAL REVIEW B, 1992, 46 (04): : 2078 - 2085
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