New insight into the growth of monolayer MoS2 flakes using an indigenously developed CVD setup: a study on shape evolution and spectroscopy

被引:12
作者
Papanai, Girija Shankar [1 ,2 ]
Pal, Samanta [3 ]
Pal, Prabir [2 ,3 ]
Yadav, Brajesh S. [4 ]
Garg, Preeti [4 ]
Gupta, Sarika [5 ]
Ansari, S. G. [6 ]
Gupta, Bipin Kumar [1 ,2 ]
机构
[1] CSIR Natl Phys Lab, Photon Mat Metrol Sub Div, Adv Mat & Device Metrol Div, Dr KS Krishnan Marg, New Delhi 110012, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
[3] CSIR Cent Glass & Ceram Res Inst, 196 Raja SC Mullick Rd, Kolkata 700032, India
[4] Solid State Phys Lab, Delhi 110054, India
[5] Natl Inst Immunol, Mol Sci Lab, Aruna Asaf Ali Marg, New Delhi 110067, India
[6] Jamia Millia Islamia, Ctr Interdisciplinary Res Basic Sci, New Delhi 110025, India
关键词
TRANSITION-METAL DICHALCOGENIDES; CHEMICAL-VAPOR-DEPOSITION; 2-DIMENSIONAL MATERIALS; ELECTRONIC-STRUCTURE; LARGE-AREA; CRYSTALS; THICKNESS; MOO3; OPTOELECTRONICS; NANOPARTICLES;
D O I
10.1039/d1qm00063b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Monolayer MoS2 has received special consideration owing to its intriguing properties and its potential to revolutionize modern technologies. Atmospheric pressure chemical vapor deposition (APCVD) is the traditional method to grow uniform and high-quality MoS2 flakes in a controlled manner. Little is known, however, about their synthesis mechanism and shape evolution. Herein, we report the synthesis of monolayer MoS2 flakes at atmospheric pressure using a home-built CVD setup. A wide range of shapes are grown from triangular shapes to many point stars, via in-between shapes such as four and six-point stars, using the weight ratio variation of MoO3 and S precursors at different growth temperatures. Further, the properties of the as-grown MoS2 flakes are probed by optical microscopy, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), Raman spectroscopy, photoluminescence (PL), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS), confirming that they are regular and good in quality. Moreover, the synthesis pathway and different shape formations are explained on the basis of the fluid model and the growing rate of Mo, S zigzag edges. Thus, this work provides a better insight into the synthesis mechanism of monolayer MoS2 and represents a significant step towards realizing potential future applications.
引用
收藏
页码:5429 / 5441
页数:13
相关论文
共 74 条
[1]   Graphene and two-dimensional materials for silicon technology [J].
Akinwande, Deji ;
Huyghebaert, Cedric ;
Wang, Ching-Hua ;
Serna, Martha I. ;
Goossens, Stijn ;
Li, Lain-Jong ;
Wong, H. -S. Philip ;
Koppens, Frank H. L. .
NATURE, 2019, 573 (7775) :507-518
[2]   Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition [J].
Amani, Matin ;
Chin, Matthew L. ;
Birdwell, A. Glen ;
O'Regan, Terrance P. ;
Najmaei, Sina ;
Liu, Zheng ;
Ajayan, Pulickel M. ;
Lou, Jun ;
Dubey, Madan .
APPLIED PHYSICS LETTERS, 2013, 102 (19)
[3]   EFFECT OF SUBSTRATE-TEMPERATURE AND FILM THICKNESS ON THE SURFACE-STRUCTURE OF SOME THIN AMORPHOUS FILMS OF MOO3 STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY (ESCA) [J].
ANWAR, M ;
HOGARTH, CA ;
BULPETT, R .
JOURNAL OF MATERIALS SCIENCE, 1989, 24 (09) :3087-3090
[4]   Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect [J].
Barvat, Arun ;
Prakash, Nisha ;
Kumar, Gaurav ;
Singh, Dilip K. ;
Dogra, Anjana ;
Khanna, Suraj P. ;
Pal, Prabir .
CURRENT APPLIED PHYSICS, 2018, 18 (02) :170-177
[5]   Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates [J].
Barvat, Arun ;
Prakash, Nisha ;
Satpati, Biswarup ;
Singha, Shib Shankar ;
Kumar, Gaurav ;
Singh, Dilip K. ;
Dogra, Anjana ;
Khanna, Suraj P. ;
Singha, Achintya ;
Pal, Prabir .
JOURNAL OF APPLIED PHYSICS, 2017, 122 (01)
[6]   Recent Advances in Two-Dimensional Materials beyond Graphene [J].
Bhimanapati, Ganesh R. ;
Lin, Zhong ;
Meunier, Vincent ;
Jung, Yeonwoong ;
Cha, Judy ;
Das, Saptarshi ;
Xiao, Di ;
Son, Youngwoo ;
Strano, Michael S. ;
Cooper, Valentino R. ;
Liang, Liangbo ;
Louie, Steven G. ;
Ringe, Emilie ;
Zhou, Wu ;
Kim, Steve S. ;
Naik, Rajesh R. ;
Sumpter, Bobby G. ;
Terrones, Humberto ;
Xia, Fengnian ;
Wang, Yeliang ;
Zhu, Jun ;
Akinwande, Deji ;
Alem, Nasim ;
Schuller, Jon A. ;
Schaak, Raymond E. ;
Terrones, Mauricio ;
Robinson, Joshua A. .
ACS NANO, 2015, 9 (12) :11509-11539
[7]   Atomic and electronic structure of MoS2 nanoparticles -: art. no. 085410 [J].
Bollinger, MV ;
Jacobsen, KW ;
Norskov, JK .
PHYSICAL REVIEW B, 2003, 67 (08)
[8]   Edge termination of MoS2 and CoMoS catalyst particles [J].
Byskov, LS ;
Norskov, JK ;
Clausen, BS ;
Topsoe, H .
CATALYSIS LETTERS, 2000, 64 (2-4) :95-99
[9]   Role of Chemical Potential in Flake Shape and Edge Properties of Mono layer MoS2 [J].
Cao, Dan ;
Shen, Tao ;
Liang, Pei ;
Chen, Xiaoshuang ;
Shu, Haibo .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (08) :4294-4301
[10]   Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 [J].
Cheiwchanchamnangij, Tawinan ;
Lambrecht, Walter R. L. .
PHYSICAL REVIEW B, 2012, 85 (20)