Using "adaptive resurf" to improve the SOA of Ldmos transistors

被引：9

作者：

Hower, P ^{[1
]}

Lin, J ^{[1
]}

Merchant, S ^{[1
]}

Paiva, S ^{[1
]}

机构：

[1] Texas Instruments Inc, Merrimack, NH 03054 USA

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measured SOA is compared with simulations for field gap Ldmos transistors. The utility of an n-type "resurf" or "nfield" implant under the field oxide is considered. For a fixed VDS, it is shown that there is an optimum value of nfield dose.

引用

页码：345 / 348

页数：4