Extended line defects in BN, GaN, and AlN semiconductor materials: Graphene-like structures

被引：20

作者：

Camacho-Mojica, Dulce C. ^{[1
]}

Lopez-Urias, Florentino ^{[1
]}

机构：

[1] IPICYT, Adv Mat Dept, Camino Presa San Jose 2055,Col Lomas 4a Secc, San Luis Potosi 78216, Slp, Mexico

来源：

CHEMICAL PHYSICS LETTERS | 2016年 / 652卷

关键词：

Boron nitride; Aluminum nitride; Gallium nitride; Graphene-like; Ab-initio; Defects; III-V materials; HEXAGONAL BORON-NITRIDE; MONOLAYER;

D O I：

10.1016/j.cplett.2016.04.045

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The extended line defect (ELD) mimicking grain boundaries in two-dimensional systems is theoretically investigated in BN, GaN, and AlN semiconductor materials with a single layer honeycomb structure. The ELD consists of octagonal-square membered rings. Density functional calculations of the electronic density of states, scanning tunneling microscopy and transmission electron microscopy image simulations are analyzed. Our results revealed that the ELDs are stable in all considered monolayers. In addition, electronic density of states calculations demonstrated that in gap states are emerged when ELD is incorporated into the honeycomb structures. Finally, results on armchair nanoribbons with bare-edges and hydrogenated edges are discussed. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：73 / 78

页数：6

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