Preparation of high-capacitance N,S co-doped carbon nanospheres with hierarchical pores as supercapacitors

被引:43
作者
Xin, Guoxiang [1 ]
Wang, MengMeng [1 ]
Zhang, Wenhong [2 ]
Song, Jinling [1 ]
Zhang, Bangwen [1 ,2 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Instrumental Anal Ctr, Baotou 014010, Peoples R China
基金
中国国家自然科学基金;
关键词
N; S co-doping; Carbon nanospheres; Hierarchical pores; High capacitance; Supercapacitors; HIGH-PERFORMANCE SUPERCAPACITORS; DOUBLE-LAYER CAPACITORS; POROUS GRAPHENE AEROGELS; LITHIUM ION BATTERIES; FACILE SYNTHESIS; ENERGY DENSITY; FLEXIBLE SUPERCAPACITORS; ELECTRODE MATERIALS; MESOPOROUS CARBON; OXIDE-FILMS;
D O I
10.1016/j.electacta.2018.08.137
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The N, S co-doped carbon nanospheres with/without hierarchical pores (N, S-HPCNs/N, S-CNs) are prepared by the pyrolysis of polypyrrole and (NH4)(2)S2O8 with/without F127 as the pore-foaming agent in flowing N-2. The results show that the combination of the hierarchical pores and N, S co-doping improves the electrochemical properties of carbon materials. As a result, the specific capacitance of N, S-HPCNs is as high as 416 F g(-1) at a current density of 0.2 A g(-1), which is much higher than that of N, S-CNs (138 F g(-1)). At a current density of 10 A g(-1), the specific capacitance of 313 F g(-1) for N, S-HPCNs is obtained, which keeps a capacitance retention of 75.2%, while the N, S-CNs has only the capacitance retention of 44.2%. After 5000 cycles, the retention ratio of N, S-HPCNs as high as 95.8% is obtained and the columbic efficiency of N, S-HPCNs is close to 100%. The symmetric supercapacitor device assembled using N, S-HPCNs exhibited a high energy density of 18.1Wh kg(-1) at a power density of 100Wkg(-1). The exhibited excellent electrochemical performances of N, S-HPCNs are attributed to a high content of doped heteroatoms N and S and the hierarchical pore structure. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:168 / 176
页数:9
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