Silicon-on-sapphire integrated waveguides for the mid-infrared

被引：209

作者：

Baehr-Jones, Tom ^{[1
]}

Spott, Alexander ^{[1
]}

Ilic, Rob ^{[2
]}

Spott, Andrew ^{[1
]}

Penkov, Boyan ^{[1
]}

Asher, William ^{[3
]}

Hochberg, Michael ^{[1
]}

机构：

[1] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA

[2] Cornell Univ, Cornell NanoScale Sci & Technol Facil, Ithaca, NY 14853 USA

[3] Univ Washington, Appl Phys Lab, Seattle, WA 98195 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 12期

关键词：

INFRARED REGION; PHOTODETECTORS; GENERATION; LASERS; LIGHT;

D O I：

10.1364/OE.18.012127

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon waveguides are now widely used to guide radiation in the near-infrared, mainly in the wavelength range of 1.1 - 2.2 mu m. While low-loss waveguides at longer wavelengths in silicon have been proposed, experimental realization has been elusive. Here we show that single-mode integrated silicon-on-sapphire waveguides can be used at mid-infrared wavelengths. We demonstrate waveguiding at 4.5 mu m, or 2222.2 cm(-1), with losses of 4.3 +/- 0.6 dB/cm. This result represents the first practical integrated waveguide system for the mid-infrared in silicon, and enables a range of new applications. (C)2010 Optical Society of America

引用

页码：12127 / 12135

页数：9

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