The effects of grain boundary response and electrode contact response on the dielectric properties of CaCu3Ti4O12

被引：13

作者：

Li, M. ^{[1
]}

Zhang, D. F. ^{[1
]}

Wang, W. Y. ^{[1
]}

Wang, G. ^{[1
]}

Chen, X. L. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 29期

基金：

中国国家自然科学基金;

关键词：

TEMPERATURE-COEFFICIENT; COPPER-TITANATE; CERAMICS; CONSTANT; IMPEDANCE;

D O I：

10.1088/0022-3727/43/29/295405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of dc bias on complex impedance, complex module and dielectric response of CaCu3Ti4O12 for different sintering durations have been investigated to elucidate the origin of its dielectric properties. It is found that both the electrode contact response and grain boundary response contribute to the dielectric constant of CaCu3Ti4O12. The origins of the semicircles in complex impedance plots of CaCu3Ti4O12 have also been investigated. At 120 degrees C, the mid-frequency semicircle in complex impedance plots represents the electrode contact response and the low-frequency semicircle may correspond to the oxygen-vacancy relevant response. The semicircle of the grain boundary response in the complex impedance plot is covered by the semicircle of the electrode contact response at this temperature.

引用

页数：7

共 31 条

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