Structural and magnetic properties of Mn-doped CuO thin films

被引：46

作者：

Zhu, Hao ^{[1
]}

Zhao, Fan

Pan, Liqing

Zhang, Yaping

Fan, Chongfei

Zhang, Yue

Xiao, John Q.

机构：

[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

[2] Univ Sci & Technol Beijing, Dept Phys, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期

关键词：

D O I：

10.1063/1.2711711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly (111) oriented Mn(6.6%-29.8%) doped CuO thin films have been fabricated on thermally oxidized silicon substrate by radio-frequency magnetron sputtering. X-ray photoelectronic spectroscopy and resistivity studies indicate that both Cu and Mn ions have 2+ valences in the film. Ferromagnetism has been observed for 15.2%-29.8% Mn doped CuO thin film with a transition temperature between 87.0 and 99.5 K. The origin of ferromagnetism is analyzed in the context of competition among several interactions between Mn and Cu ions. Highly resistive nature of the films eliminates the carrier mediate mechanisms. The ferromagnetism arises from the ferromagnetic coupling between Mn ions mediated by Cu ions. (c) 2007 American Institute of Physics.

引用

页数：3

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