Metal-assisted chemical etching for very high aspect ratio grooves in n-type silicon wafers

被引：10

作者：

Booker, Katherine ^{[1
]}

Brauers, Maureen ^{[1
]}

Crisp, Erin ^{[1
]}

Rahman, Shakir ^{[1
]}

Weber, Klaus ^{[1
]}

Stocks, Matthew ^{[1
]}

Blakers, Andrew ^{[1
]}

机构：

[1] Australian Natl Univ, Coll Engn & Comp Sci, Ctr Sustainable Energy Syst, Canberra, ACT 0200, Australia

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2014年 / 24卷 / 12期

关键词：

metal assisted etching; surface roughness; high aspect ratio; vertical grooves; CATALYSTS; NANOWIRES; ARRAYS; FILMS;

D O I：

10.1088/0960-1317/24/12/125026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-assisted chemical etching (MACE) is an inexpensive, simple method for etching silicon structures, including the etching of high aspect ratio grooves. We improve on the best reported results in this area by etching grooves with aspect ratios of 65 (vertical depths 650 mu m) in n-type silicon. The grooves maintain an excellent degree of verticality and show minimal width variation. We elucidate some limiting factors and demonstrate the effect of silicon surface roughness on the groove etching.

引用

页数：6

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