The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers

被引:33
作者
Koller, Christian [1 ,2 ]
Pobegen, Gregor [2 ]
Ostermaier, Clemens [3 ]
Huber, Martin [3 ]
Pogany, Dionyz [1 ]
机构
[1] TU Wien, Inst Solid State Elect, Floragasse 7, A-1040 Vienna, Austria
[2] KAI GmbH, Europastr 8, A-9524 Villach, Austria
[3] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria
关键词
ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN; DISLOCATIONS; SILICON; EPITAXY;
D O I
10.1063/1.4993571
中图分类号
O59 [应用物理学];
学科分类号
摘要
In carbon-doped GaN (GaN:C) buffers used in a GaN-on-Si technology, the buffer is embedded in between transition and channel layers. This makes the analysis of buffer properties difficult due to e.g., carrier injection from or potential drop at these adjacent layers. Here, we analyze capacitanceand current-voltage characteristics of 200-300 nm thick GaN: C ([C] = 10(19) cm(-3)) layers which are embedded between a top metal electrode and bottom n-doped GaN (n-GaN). Such structures allow a better potential control in GaN: C and thus determination of the band diagram quantitatively. The accumulation of negative charge (concentration up to 6 x 10(17) cm(-3)) with bias is observed in GaN:C at both polarities. For biases V-appl < +/- 1.7 V at the top electrode, negative charges accumulate in GaN: C near to its interface with n-GaN so that GaN: C exhibits no potential drop and blocks leakage current. For V-appl > +/- 1.7 V, accumulated negative charges in GaN: C raise an energy barrier of similar to 1.1 eV for electron injection from n-GaN to GaN:C. This causes a potential drop in GaN: C leading to a significant leakage current increase. The Fermi level pinning in GaN:C at a commonly referred acceptor at E-V +/- 0.7(+/- 0.2) eV is extracted only from electrostatic considerations. The occupancy change of carbon acceptors is attributed to trapping processes where the dislocation-related conductive paths are supposed to be involved in carrier transport from the top metal electrode to the carbon defect. Published by AIP Publishing.
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页数:5
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