Passive-active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality

被引：24

作者：

Hosoi, Takuji ^{[1
]}

Katsu, Yoshihito ^{[1
]}

Moges, Kidist ^{[1
]}

Nagai, Daisuke ^{[1
]}

Sometani, Mitsuru ^{[1
,2
]}

Tsuji, Hidenori ^{[1
,3
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

[3] Fuji Elect Co Ltd, Hino, Tokyo 1918502, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 09期

关键词：

CHANNEL MOBILITY; SILICON-CARBIDE; MOSFETS;

D O I：

10.7567/APEX.11.091301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We explored the passive-active oxidation boundary for the thermal oxidation of a 4H-SiC(0001) surface. The O-2 partial pressure [P(O-2)] for passive-active transition was found to be around 0 03 and 0 3kPa at 1500 and 1600 degrees C, respectively. We also found that the passive-active oxidation boundary for an Al-implanted surface shifted to a slightly higher P(O-2). A metal-oxide-semiconductor field-effect transistor with a gate oxide formed u nder P(O-2) of 0.3 kPa at 1600 degrees C demonstrated a field-effect mobility of 9.7 cm(2) V-1 s(-1), which was three times higher than that for a reference sample oxidized in atmospheric oxygen ambient at a moderate temperature and a high threshold voltage stability. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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