Multiferroic GaN nanofilms grown within Na-4 mica channels

被引：17

作者：

Bhattacharya, Santanu

Datta, A.

Chakravorty, D. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, DST Unit Nanosci, Kolkata 700032, India

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

关键词：

ferromagnetism; gallium compounds; III-V semiconductors; magnetoelectric effects; magnetostriction; multiferroics; nanofabrication; nanostructured materials; permittivity; wide band gap semiconductors; FERROELECTRICITY; MANGANITE; FILMS;

D O I：

10.1063/1.3340897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.

引用

页数：3