New approach to rapid characterization of single-crystalline silicon carbide

被引：2
|
作者：
Mynbaeva, M. G. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 01期
关键词：
SIC MONOCRYSTALS; N-TYPE; GROWTH; DEFECTS; WAFERS;
D O I：
10.1134/S1063785010010256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new approach to the characterization of single-crystalline silicon carbide (SiC) ingots is proposed, which can be used for the rapid diagnostics of material quality under large-scale commercial production conditions. The proposed method can reveal various defects, such as polytype inclusions, small-angle grain boundaries, dislocations, micropipes, and inhomogeneous dopant distribution and can be used to optimize technological regimes for growing bulk SiC single crystals.
引用
收藏
页码：80 / 82
页数：3
相关论文
共 50 条
  • [21] Dynamic fracture of glass and single-crystalline silicon
    Cramer, T
    Wanner, A
    Gumbsch, P
    ZEITSCHRIFT FUR METALLKUNDE, 1999, 90 (09): : 675 - 686
  • [22] Role of Tribochemistry in Nanowear of Single-Crystalline Silicon
    Yu, Jiaxin
    Kim, Seong H.
    Yu, Bingjun
    Qian, Linmao
    Zhou, Zhongrong
    ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (03) : 1585 - 1593
  • [23] Chemically anisotropic single-crystalline silicon nanotetrahedra
    Berenschot, J. W.
    Tas, N. R.
    Jansen, H. V.
    Elwenspoek, M.
    NANOTECHNOLOGY, 2009, 20 (47)
  • [24] Dynamic Fracture of Glass and Single-crystalline Silicon
    Cramer, Till
    Wanner, Alexander
    Gumbsch, Peter
    International Journal of Materials Research, 1999, 90 (09): : 675 - 686
  • [25] Photoexcited anisotropic etching of single-crystalline silicon
    Sakaue, Hiroyuki, 1600, (32):
  • [26] PHOTOEXCITED ANISOTROPIC ETCHING OF SINGLE-CRYSTALLINE SILICON
    SAKAUE, H
    MORIMOTO, N
    HORIIKE, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (7B): : L1024 - L1026
  • [27] Room-temperature yield and fracture strength of single-crystalline 6H silicon carbide
    Kwon, Gihyun
    Jo, Hyo-Haeng
    Lim, Sangyeob
    Shin, Chansun
    Jin, Hyung-Ha
    Kwon, Junhyun
    Sun, Gwang-Min
    JOURNAL OF MATERIALS SCIENCE, 2015, 50 (24) : 8104 - 8110
  • [28] Room-temperature yield and fracture strength of single-crystalline 6H silicon carbide
    Gihyun Kwon
    Hyo-Haeng Jo
    Sangyeob Lim
    Chansun Shin
    Hyung-Ha Jin
    Junhyun Kwon
    Gwang-Min Sun
    Journal of Materials Science, 2015, 50 : 8104 - 8110
  • [29] OPTICAL AND ELECTRICAL-PROPERTIES OF SINGLE-CRYSTALLINE ZIRCONIUM CARBIDE
    MODINE, FA
    HAYWOOD, TW
    ALLISON, CY
    PHYSICAL REVIEW B, 1985, 32 (12): : 7743 - 7747
  • [30] Structure and nanophase evolution of single-crystalline Ni carbide nanoparticles
    Ahn, Hae Jun
    Kim, Sun Jie
    Huh, Seung Hun
    Kim, Sang Sub
    CERAMICS INTERNATIONAL, 2025, 51 (05) : 6762 - 6771
12345