New approach to rapid characterization of single-crystalline silicon carbide

被引：2
|
作者：
Mynbaeva, M. G. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2010年 / 36卷 / 01期
关键词：
SIC MONOCRYSTALS; N-TYPE; GROWTH; DEFECTS; WAFERS;
D O I：
10.1134/S1063785010010256
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new approach to the characterization of single-crystalline silicon carbide (SiC) ingots is proposed, which can be used for the rapid diagnostics of material quality under large-scale commercial production conditions. The proposed method can reveal various defects, such as polytype inclusions, small-angle grain boundaries, dislocations, micropipes, and inhomogeneous dopant distribution and can be used to optimize technological regimes for growing bulk SiC single crystals.
引用
收藏
页码：80 / 82
页数：3
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