{111} quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy

被引：11

作者：

Arnoult, A ^{[1
]}

Gonzalez-Posada, F ^{[1
]}

Blanc, S ^{[1
]}

Bardinal, V ^{[1
]}

Fontaine, C ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse 4, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 3-4期

关键词：

dilute nitrides; molecular beam epitaxy; III-V semiconductors; photoluminescence; SIMS;

D O I：

10.1016/j.physe.2004.01.019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dilute nitrides are promising alloys in view of extending potential micro- and opto-electronics applications of GaAs technology. Orientation effects on nitrogen incorporation in GaAs have been scarcely addressed. Here, GaAsN on (10 0) and on As(B)- and Ga(A)-rich (1 1 1) substrates was grown by molecular beam epitaxy at different substrate temperatures. Nitrogen content measured by secondary ion mass spectrometry as a function of the growth temperature highlights the influence of orientation on nitrogen incorporation. Furthermore, thermal annealing is shown to improve the optical quality of GaAsN quantum wells whatever their substrate orientations. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：352 / 355

页数：4

共 6 条

[1] Comparison between dilute nitrides grown on {111} and (100) GaAs substrates:: N incorporation and quantum well optical properties [J].