A 38-dBm power amplifier using AlGaAs/InGaAs/GaAs PHEMT for S-band applications

被引：0

作者：

Liu, HZ ^{[1
]}

Huang, HK

Chiu, RJ

Chu, CK

Lin, CH

Wang, CC

Wang, YH

Chang, CH

Wu, CL

Chang, CS

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Transcom Inc, Tainan 701, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2005年 / 44卷 / 04期

关键词：

S-band; power amplifier; PHEMT; linearity;

D O I：

10.1002/mop.20620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance S-band power amplifier fabricated oil a low-cost 20-mil-thick FR-4 printed circuit board (PCB) far S-band radar applications is demonstrated. The amplifier consists of a single-ended driver stage and a balanced output power stage utilizing Wilkinson power dividers/combiners with quarter-wave transmission lines. Under 10-V and 2.45-A dc bias condition, the S-band power amplifier with 23-dB sinall-signal gain, 38-dBin 1-dB gain-compression power with 25.6% power-added efficiency (PAE) and 3.9-dB noise figure can be achieved. In addition, excellent linearity with a 48.73-dBm 3(rd)-order intercept point is also measured. (C) 2005 Wiley Periodicals, Inc.

引用

页码：311 / 313

页数：3

共 8 条

[1]

CICOLANI M, 1992, IEEE MTT S INT MICR, P141

[2]

CRIPPS SC, 1983, IEEE MTT S INT MICR, P221, DOI [10.1109/MWSYM.1983.1130864, DOI 10.1109/MWSYM.1983.1130864]

[3]

Cripps Steve C, RF POWER AMPLIFIERS

[4] 12-KW S-BAND SOLID-STATE TRANSMITTER FOR MODERN RADAR SYSTEMS [J].

HANCZOR, M ;

KUMAR, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (12) :2237-2242

[5]

KOMIAK JJ, 1988, 1988 IEEE GAAS IC S, P45

[6]

Murae T, 2000, IEEE MTT-S, P943, DOI 10.1109/MWSYM.2000.863512

[7]

ROHDE UL, 1988, MICROWAVE J, V31, P130

[8] Accurate small-signal modeling of HFET's for millimeter-wave applications [J].

Rorsman, N ;

Garcia, M ;

Karlsson, C ;

Zirath, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (03) :432-437

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